PART |
Description |
Maker |
HY18N20D |
200V / 18A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
OM6010CSA |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 18A条(丁)|54AA
|
Diodes, Inc.
|
IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.035ohm,身份证\u003d 18A POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*) THRU-HOLE (TO-257AA) 100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
BYV32 BYVF32 BYVB32 BYV32-200 BYVB32-200 BYVF32-20 |
Dual Ultrafast Rectifiers, Forward Current 18A, Reverse Recovery Time 25ns, Reverse Voltage 50 to 200V From old datasheet system
|
VISAY[Vishay Siliconix] http://
|
IRF9240 IRF9240-15 |
Simple Drive Requirements TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A) HEXFET?TRANSISTORS 200V, P-CHANNEL 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
FQA32N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
|
Fairchild Semiconductor
|